Modeling Electrical Behaviour and Temperature Dependency of Amorphous Thin Film Solar Cells
Keywords:
Amorphous Silicon, Amorphous SiliconGermanium,solarcellsimulation,temperaturedependency.
Abstract:
Introducing Ge atoms to the Si lattice in Si-based solar cells are an effective approach in improving their characteristics. Especially, current density of the cell can be enhanced without deteriorating its open circuit voltage. In this work a new modeling approach is developed and used for optimization and efficiency enhancement of single and double junction hetero structure solar cells based on the optimization of i-layer and p layer properties. Also the temperature dependency of the electrical behaviour of the amorphous silicon thin film hetero structure solar cell such as I-V curve and Electron current density is investigated. After optimizing the parameters of i-layer and p-layer of solar cell, a double-junction solar cell with JSC=267A/m, V=1. 13V, FF=0. 795, and efficiency of 23. 5% has OCbeen achieved at T=300 K.