A High Efficient Fully Integrated Passive CMOS Rectifier for Wirelessly Powered Devices
Keywords:
Full-Wave-Bridged Rectifier, Passive and Active Rectifier, NPHWC, ULPBS, Bootstrapped Technique, ULPD, DBBR.
Abstract:
A highly efficient fully integrated passive CMOS rectifier is proposed in this paper. Using four ultra low power and low voltage techniques consist of: Negative to Positive Half Wav+Z6e Converter (NPHWC), bootstrapped technique, Dynamic Bulk Biasing Regulation (DBBR) and Ultra Low Power Diodes (ULPD) with proper leakage current compensation technique, this new topology is very high efficient in wide input voltage range of both high voltages and low voltage advanced sub-micron applications simultaneously. Unlike the recently proposed rectifiers, in this new rectifier, for wide range of AC input signal amplitude the power and voltage transmission efficiency are higher than 90%. New proposed rectifier is applicable for bio-implantable systems with high current demands. The new full-wave rectifier also simulated and optimized only for low voltage advanced sub-micron applications. In |V|=0. 4V the voltage and power transmission efficiency are 70. 3% and 68. 3% respectively. These values in |Vin1inICEE2012 1569524575|=0. 5V reach to 82% and 69% respectively. This rectifier designed and simulated in 0. 18یm standard CMOS technology.